Manufacturer | Part # | Datasheet | Description |
AVAGO TECHNOLOGIES LIMI...
|
AMMC-6430 |
638Kb/7P |
25 - 33 GHz Power Amplifier |
Broadcom Corporation.
|
AMMC-6430 |
379Kb/7P |
25 - 33 GHz Power Amplifier |
AVAGO TECHNOLOGIES LIMI...
|
AMMC-6431 |
307Kb/9P |
25-33 GHz 0.7W Power Amplifier MMIC |
National Semiconductor ...
|
NSBMC096-16 |
266Kb/18P |
NSBMC096-16/-25/-33 Burst Memory Controller |
Intel Corporation
|
80960CA-33 |
977Kb/68P |
80960CA-33, -25, -16 32-BIT HIGH-PERFORMANCE EMBEDDED PROCESSOR |
A80960CF33 |
1Mb/70P |
80960CF-40, -33, -25 32-Bit High-Performance Superscalar Embedded Microprocessor |
Kemet Corporation
|
EXV336M025A9GAA |
74Kb/1P |
Aluminum Electrolytic, 105C LowZ, EXV, 33 uF, 20%, 25 V, -55/+105C |
Intel Corporation
|
80960CF-40 |
1Mb/77P |
80960CF-40, -33, -25, -16 32-BIT HIGH-PERFORMANCE SUPERSCALAR EMBEDDED MICROPROCESSOR |
TRIAD MAGNETICS
|
SP-33 |
42Kb/1P |
SP-33 |
DB Lectro Inc
|
BBS-33 |
72Kb/1P |
BBS-33 |
Wall Industries,Inc.
|
ELV |
114Kb/4P |
DHW24S3.3-33 |
Kemet Corporation
|
T491D336M025AT |
82Kb/1P |
Capacitor, Tantalum, SMD, MnO2, Molded, 33 uF, 7343, +/-20% Tol, 25 VDC (85C) |
ESK336M350AL4AA |
76Kb/1P |
Aluminum Electrolytic, 85C, ESK, 33 uF, 20%, 350 V, -25/+85C, Lead Spacing = 5mm |
ESK336M250AL4AA |
76Kb/1P |
Aluminum Electrolytic, 85C, ESK, 33 uF, 20%, 250 V, -25/+85C, Lead Spacing = 5mm |
ESH336M025AC3AA |
76Kb/1P |
Aluminum Electrolytic, 105C, ESH, 33 uF, 20%, 25 V, -40/+105C, Lead Spacing = 2mm |
ESK336M400AM7AA |
76Kb/1P |
Aluminum Electrolytic, 85C, ESK, 33 uF, 20%, 400 V, -25/+85C, Lead Spacing = 7.5mm |
ESH336M200AL3AA |
76Kb/1P |
Aluminum Electrolytic, 105C, ESH, 33 uF, 20%, 200 V, -25/+105C, Lead Spacing = 5mm |
ESK336M160AH4AA |
76Kb/1P |
Aluminum Electrolytic, 85C, ESK, 33 uF, 20%, 160 V, -25/+85C, Lead Spacing = 5mm |
ESH336M160AL3AA |
76Kb/1P |
Aluminum Electrolytic, 105C, ESH, 33 uF, 20%, 160 V, -25/+105C, Lead Spacing = 5mm |
ESH336M250AL4AA |
76Kb/1P |
Aluminum Electrolytic, 105C, ESH, 33 uF, 20%, 250 V, -25/+105C, Lead Spacing = 5mm |