N-CHANNEL Datasheet(PDF) - MSC0606W - MORE Semiconductor Company Limited

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N-CHANNEL Datasheet, PDF

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Searched Keyword : 'N-CHANNEL' - Total: 222 (1/12) Pages

Manufacturer	Part #	Datasheet	Description
MORE Semiconductor Comp...	MSC0606W	701Kb/8P	N and P-Channel Enhancement Mode Power MOS FET
	MSC0203S-SOT23	521Kb/10P	N and P-Channel Enhancement Mode Power MOS FET
	MSC4606W	576Kb/9P	N and P-Channel Enhancement Mode Power MOS FET
	MSC4606W-SOP8	576Kb/9P	N and P-Channel Enhancement Mode Power MOS FET
	MSC0203S	521Kb/10P	N and P-Channel Enhancement Mode Power MOS FET
	MSN2020	460Kb/6P	20V(D-S) N-Channel Enhancement Mode Power MOS FET
	MSN2040K	437Kb/6P	200V(D-S) N-Channel Enhancement Mode Power MOS FET
	MSN2300B	356Kb/6P	20V(D-S) N-Channel Enhancement Mode Power MOS FET
	MSN0980K	484Kb/6P	85V(D-S) N-Channel Enhancement Mode Power MOS FET
	MSN1006U	597Kb/6P	100V(D-S) N-Channel Enhancement Mode Power MOS FET
	MSN1010W	545Kb/6P	100V(D-S) N-Channel Enhancement Mode Power MOS FET
	MSN1017D	482Kb/6P	100V(D-S) N-Channel Enhancement Mode Power MOS FET
	MSN1540D	470Kb/6P	150V(D-S) N-Channel Enhancement Mode Power MOS FET
	MSN0620Z	500Kb/6P	60V(D-S) N-Channel Enhancement Mode Power MOS FET
	MSN1008W	598Kb/6P	100V(D-S) N-Channel Enhancement Mode Power MOS FET
	MSN2304	399Kb/6P	30V(D-S) N-Channel Enhancement Mode Power MOS FET
	MSN04C0K-TO220	629Kb/6P	40V(D-S) N-Channel Enhancement Mode Power MOS FET
	MSN06B5K-TO220	527Kb/6P	60V(D-S) N-Channel Enhancement Mode Power MOS FET
	MSN138-SOT23	528Kb/6P	50V(D-S) N-Channel Enhancement Mode Power MOS FET
	MSN0603Y-SOT89	706Kb/6P	60V(D-S) N-Channel Enhancement Mode Power MOS FET

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What is N-CHANNEL

N-channel is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that has a channel doped with an n-type material.

In an N-channel MOSFET, the flow of current is controlled by a thin metal oxide film that acts as a gate, which is isolated from the rest of the device by a thin insulating layer.

When a positive voltage is applied to the gate, it creates an electric field that attracts electrons to the gate and forms a channel between the source and drain terminals.

This channel allows current to flow between the source and drain terminals, and the width of the channel is determined by the voltage applied to the gate.

N-channel MOSFETs are widely used in a variety of applications, including power supplies, motor drives, and inverters, due to their high input impedance, low on-state resistance, fast switching speeds, and high efficiency.

However, N-channel MOSFETs also have some disadvantages, such as a limited voltage rating and the need for a gate drive circuit to control the device. Additionally, they are susceptible to thermal runaway, which can cause the device to fail if it overheats.

To mitigate this risk, N-channel MOSFETs are often used in combination with other components, such as thermal protection devices or snubber circuits.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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