N-CHANNEL Datasheet(PDF) - BUK6215-75C - NXP Semiconductors

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N-CHANNEL Datasheet, PDF

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Searched Keyword : 'N-CHANNEL' - Total: 788 (1/40) Pages

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BUK6215-75C	227Kb/14P	N-channel TrenchMOS FET Rev. 02-4 October 2010
	BUK6211-75C	219Kb/15P	N-channel TrenchMOS FET Rev. 02-28 September 2010
	2N7002KA	94Kb/11P	N-channel TrenchMOS FET Rev. 03-25 February 2008
	BUK663R5-55C	138Kb/11P	N-channel TrenchMOS FET Rev. 01-3 August 2010
	BUK6507-75C	185Kb/14P	N-channel TrenchMOS FET Rev. 02-4 October 2010
	BF862	87Kb/12P	N-channel junction FET 2000 Jan 05
	BUK9606-55B	193Kb/13P	N-channel TrenchMOS FET Rev. 04-23 July 2009
	BUK9506-55B	195Kb/13P	N-channel TrenchMOS FET Rev. 04-23 July 2009
	PHP20NQ20T-127	111Kb/9P	N-channel TrenchMOS횚 transistor August 1999 Rev 1.000
	BUK9E06-55B	194Kb/13P	N-channel TrenchMOS FET Rev. 04-22 July 2009
	PHD77NQ03T	107Kb/13P	N-channel TrenchMOS FET Rev. 01-28 November 2006
	PHN210T	94Kb/7P	Dual N-channel enhancement mode March 1999 Rev 1.000
	BF1107	60Kb/8P	N-channel single gate MOSFET Rev. 04-9 January 2007
	BF1217WR	185Kb/17P	N-channel dual gate MOSFET Rev. 2 - 20 June 2011
	BF991	226Kb/7P	N-channel dual-gate MOS-FET Rev. 03-20 November 2007
	BF1214	211Kb/18P	Dual N-channel dual gate MOSFET Rev. 01-30 October 2007
	PH20100S	183Kb/12P	N-channel TrenchMOS standard level FET Rev. 03-2 February 2009
	PHB29N08T	189Kb/12P	N-channel TrenchMOS standard level FET Rev. 03-13 October 2009
	PHB32N06LT	376Kb/11P	N-channel TrenchMOS logic level FET Rev. 02-30 November 2009
	PHB47NQ10T	205Kb/13P	N-channel TrenchMOS standard level FET Rev. 02-25 February 2010

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What is N-CHANNEL

N-channel is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that has a channel doped with an n-type material.

In an N-channel MOSFET, the flow of current is controlled by a thin metal oxide film that acts as a gate, which is isolated from the rest of the device by a thin insulating layer.

When a positive voltage is applied to the gate, it creates an electric field that attracts electrons to the gate and forms a channel between the source and drain terminals.

This channel allows current to flow between the source and drain terminals, and the width of the channel is determined by the voltage applied to the gate.

N-channel MOSFETs are widely used in a variety of applications, including power supplies, motor drives, and inverters, due to their high input impedance, low on-state resistance, fast switching speeds, and high efficiency.

However, N-channel MOSFETs also have some disadvantages, such as a limited voltage rating and the need for a gate drive circuit to control the device. Additionally, they are susceptible to thermal runaway, which can cause the device to fail if it overheats.

To mitigate this risk, N-channel MOSFETs are often used in combination with other components, such as thermal protection devices or snubber circuits.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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