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TRANSISTOR Datasheet, PDF

NXP Semiconductors(1580)Pan Jit International Inc.(65)Panasonic Semiconductor(285)PerkinElmer Optoelectronics(1)PMC-Sierra, Inc(2)Polyfet RF Devices(138)Power Innovations Ltd(13)Powerex Power Semiconductors(58)QT Optoelectronics(1)Rectron Semiconductor(130)Renesas Technology Corp(222)RF Micro Devices(1)RFHIC(2)RHOPOINT COMPONENTS(2)RICOH electronics devices division(1)Rochester Electronics(1)Rohm(572)SamHop Microelectronics Corp.(217)Samsung semiconductor(142)Sanken electric(389)SanRex Corporation(20)Sanyo Semicon Device(286)Savantic, Inc.(4)SeCoS Halbleitertechnologie GmbH(428)Seiko Instruments Inc(1)Seme LAB(358)Semicoa Semiconductor(107)SemiHow Co.,Ltd.(23)SemiWell Semiconductor(23)Semtech Corporation(15)SEMTECH ELECTRONICS LTD.(293)Sensitron(3)Seoul Semiconductor(1)Sharp Electrionic Components(3)Shenzhen Ping Sheng Electronics Co., Ltd.(5)Shindengen Electric Mfg.Co.Ltd(78)Siemens Semiconductor Group(492)SiGe Semiconductor, Inc.(1)Silan Microelectronics Joint-stock(2)Silicon Standard Corp.(6)Sipex Corporation(1)Sirectifier Global Corp.(4)SIRENZA MICRODEVICES(4)Skyworks Solutions Inc.(4)Solid States Devices, Inc(120)Sony Corporation(3)Stanson Technology(47)STMicroelectronics(767)Sunspirit Electronic Ltd(2)Suntac Electronic Corp.(14)Supertex, Inc(1)Surge Components(2)SynQor Worldwide Headquarters(1)Tachyonics CO,. LTD(12)TAITRON Components Incorporated(16)Taiwan Memory Technology(1)Taiwan Semiconductor Company, Ltd(162)TEMIC Semiconductors(11)Texas Instruments(2)Texas Instruments(20)Thinki Semiconductor Co., Ltd.(12)Tiger Electronic Co.,Ltd(41)Torex Semiconductor(10)Toshiba Semiconductor(784)Transys Electronics(45)TRANSYS Electronics Limited(15)TriQuint Semiconductor(20)Vishay Telefunken(1)
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Search Description : 'Transistor' - Total: 47 (1/3) Pages
Electronic ManufacturerPart NumberDatasheetElectronics Description

Stanson Technology
STP4407 The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP7401 STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST7400 ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4546 STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
8550S PNP TRANSISTOR
STN4392 STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
8050 NPN TRANSISTOR
B1424 PNP TRANSISTOR
STP4925 STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2318SRG ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP6308 STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
D2152 NPN TRANSISTOR
ST2319SRG ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STN4850 STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
B1426 PNP TRANSISTOR
STC6332 The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
STN4526 STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
A733 PNP TRANSISTOR
STP4435A STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP9437 STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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