Manufacturer | Part # | Datasheet | Description |
International Rectifier
|
IRG4BC30W |
139Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) |
IRG4PC30W |
123Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) |
IRG4BC30W |
582Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) |
IRG4PC50W |
157Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A) |
IRGPS4067DPBF |
270Kb/10P |
Low VCE (on) Trench IGBT Technology |
IRGI4056DPBF |
421Kb/10P |
Low VCE (ON) trench IGBT technology |
IRG7PH42UD2PBF |
349Kb/10P |
Low VCE (ON) Trench IGBT Technology |
Vishay Siliconix
|
VS-GB300TH120U |
164Kb/7P |
VCE(on) with positive temperature coefficient Revision: 12-Jun-15 |
Infineon Technologies A...
|
AUIRGDC0250 |
443Kb/10P |
Low VCE (on) Planar IGBT Technology 2018-03-01 |
AUIRGPS4070D0 |
849Kb/11P |
Low VCE (on) Trench IGBT Technology 2016-12-12 |
Inchange Semiconductor ...
|
2N5495 |
140Kb/2P |
Low Saturation Voltage-: VCE (sat)= 1V(Max)@IC= 3A |
2N5497 |
140Kb/2P |
Low Saturation Voltage-: VCE (sat)= 1V(Max)@IC= 3.5A |
First Silicon Co., Ltd
|
FTC2655 |
162Kb/2P |
Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) |
Solid State Optronic
|
AD6C541 |
346Kb/8P |
Low On Resistance (1 Max) |
International Rectifier
|
GB35XF120K |
325Kb/9P |
Low VCE (on) Non Punch Through IGBT Technology |
Solid State Optronic
|
M251 |
175Kb/5P |
Low on-resistance (1 ohm MAX) |
International Rectifier
|
IRGI4090PBF |
377Kb/7P |
IRGI4090PbF Low VCE(on) and Energy per Pulse (EPULSE |
ON Semiconductor
|
MCH5541 |
84Kb/6P |
PNP/NPN Bipolar Transistor (-)30V, (-)700mA, VCE(sat) ; (-220)190mV (max) August 2014 - Rev. 0 |
Vishay Siliconix
|
VS-GT250SA60S |
196Kb/9P |
Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A 01-Jan-2023 |
Solid State Optronic
|
AD2C541 |
243Kb/5P |
Low On-Resistance (1 ohm MAX) |