Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp
|
NX6308GH |
221Kb/9P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION |
NX6309GH |
221Kb/9P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION |
NX6308GH |
221Kb/9P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION |
PL10692EJ03V0DS |
221Kb/9P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION |
DAC1628D1G25 |
2Mb/130P |
Dual 16-bit DAC: JESD204B interface: up to 1.25 Gsps; x2, x4 and x8 interpolating 2 July 2012 |
NX6309GH |
221Kb/9P |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION |
DAC1627D1G25 |
1,023Kb/81P |
Dual 16-bit DAC, LVDS interface, up to 1.25 Gsps, x2, x4 and x8 interpolating 12 December 2012 |
PS720C-1A |
168Kb/12P |
4-PIN SOP, 0.1 廓 LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE 1.25 A CONTINUOUS LOAD CURRENT |
NX6514EH |
217Kb/7P |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2 |
NX6314EH |
205Kb/7P |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS |
NX6510GH |
207Kb/7P |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2 |
NX6514EH |
205Kb/7P |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2 |
NX6511GH |
207Kb/7P |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2 |
PS720C-1A |
176Kb/12P |
4-PIN SOP, 0.1 廓 LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET |