Manufacturer | Part # | Datasheet | Description |
Cree, Inc
|
CGH40120F |
1Mb/13P |
120 W, RF Power GaN HEMT |
CGH40120P |
1Mb/12P |
120 W, RF Power GaN HEMT |
CGH60120D |
592Kb/7P |
120 W, 6.0 GHz, GaN HEMT Die |
C450TR5050-S18000 |
550Kb/5P |
Low Forward Voltage - 3.3 V Typical at 120 mA |
C450TR5270M-S20000 |
515Kb/6P |
Low Forward Voltage -3.2 V Typical at 120 mA |
C450TR5270-S20000 |
552Kb/6P |
Low Forward Voltage - 3.2 V Typical at 120 mA |
CGH21120F |
1Mb/13P |
120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX |
CGH25120F |
1Mb/12P |
120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE |
CGH09120F |
1Mb/13P |
120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM |
C450TR5050-S18000 |
519Kb/5P |
Adhesive Die Attach Low Forward Voltage 3.3 V Typical at 120 mA |
PXAC261212FC |
557Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz |
PXAC201202FC |
590Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz |