3.3V/5V, Datasheet(PDF) - K6R4004C1C-C - Samsung semiconductor

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3.3V/5V, Datasheet, PDF

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Searched Keyword : '3.3V/5V,' - Total: 107 (1/6) Pages

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K6R4004C1C-C	155Kb/8P	1Mx4 Bit High Speed Static RAM(5V Operating).
	K6R4016C1C-C	184Kb/11P	256Kx16 Bit High Speed Static RAM(5V Operating).
	KMM53232004BK	420Kb/19P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM5324004BSW	401Kb/19P	4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
	KMM53216000BK	364Kb/18P	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53232000BK	376Kb/18P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM5322104CKU	274Kb/15P	2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
	KMM5322204C2W	287Kb/17P	2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V
	KMM53216004CK	445Kb/21P	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53232004CK	459Kb/21P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM5322200C2W	280Kb/17P	2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
	KMM5324000BSW	357Kb/18P	4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
	KMM5324004CSW	435Kb/21P	4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
	KMM5328004CSW	440Kb/21P	8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
	KMM53216000CK	397Kb/20P	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	K6R1004C1A	127Kb/8P	256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out
	KMM5328004BSW	406Kb/19P	8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
	KMM53216004BK	409Kb/19P	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53232000CK	412Kb/20P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	K6R4016V1C-C	190Kb/11P	256Kx16 Bit High Speed Static RAM(3.3V Operating)

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