| Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp
|
RBN40H65T1FPQ-A0 |
309Kb/5P |
650V - 40A - IGBT |
| RBN40H125S1FPQ-A0 |
326Kb/5P |
1250V - 40A - IGBT |
| RJH60M6DPQ-E0 |
244Kb/10P |
600V - 40A - IGBT Application: Inverter |
| RJH60D6DPQ-E0 |
108Kb/10P |
600V - 40A - IGBT Application: Inverter |
| RJH60D6DPM |
107Kb/10P |
600V - 40A - IGBT Application: Inverter |
| RJH60M6DPQ-E0 |
244Kb/10P |
600V - 40A - IGBT Application: Inverter |
| RJH60D6DPK |
107Kb/10P |
600V - 40A - IGBT Application: Inverter |
| RJF0618JPE |
101Kb/8P |
60V-40A Silicon N Channel Thermal FET |
| RJH60F5BDPQ-A0 |
101Kb/9P |
600V - 40A - IGBT High Speed Power Switching |
| RJP60F5DPK |
86Kb/7P |
600V - 40A - IGBT High Speed Power Switching |
| RJP60F5DPM |
84Kb/7P |
600V - 40A - IGBT High Speed Power Switching |
| RJH60F5BDPQ-A0 |
101Kb/9P |
600V - 40A - IGBT High Speed Power Switching |
| RJP60F5DPK |
85Kb/7P |
600V - 40A - IGBT High Speed Power Switching
May 31, 2012 |
| RJF0410JPE |
204Kb/8P |
40V - 40A - N Channel Thermal FET Power Switching
Oct 29, 2015 |
| ISL8240M |
1Mb/31P |
Dual 20A/Single 40A Step-Down Power Module |
| 2SK1527-E1-E |
247Kb/8P |
500V - 40A - MOS FET High Speed Power Switching
Feb.4.2022 |
| RJU36B2WDPF |
64Kb/4P |
360V - 40A - Dual Diode Ultra Fast Recovery Diode |
| RJU36B2WDPF |
130Kb/4P |
360V - 40A - Dual Diode Ultra Fast Recovery Diode
Dec 06, 2013 |
| 2SK1527-E1-E |
95Kb/7P |
l500V - 40A - MOS FET High Speed Power Switching |
| RJF0410JPE |
209Kb/8P |
40V - 40A - N Channel Thermal FET Power Switching |
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