Manufacturer | Part # | Datasheet | Description |
Fairchild Semiconductor
|
BZX84C5V6 |
1Mb/4P |
These ratings are based on a maximum junction temperature of 150 degrees C. |
BZX55C39 |
166Kb/4P |
These ratings are limiting values above which the serviceability of the diode may be impaired. |
FDPF10N60NZ |
439Kb/10P |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild?셲 proprietary, planar stripe, DMOS technology. |
FQD6N50C |
687Kb/9P |
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary planar stripe, DMOS technology |
FGD3N60UNDF |
1Mb/10P |
Using advanced NPT IGBT technology, Fairchild짰?셲 the NPT vIGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential. |