BIPOLAR Datasheet(PDF) - MMG3007NT1 - NXP Semiconductors

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BIPOLAR Datasheet, PDF

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Searched Keyword : 'BIPOLAR' - Total: 41 (1/3) Pages

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	MMG3007NT1	438Kb/14P	Heterojunction Bipolar Transistor (InGaP HBT) Rev. 7, 9/2014
	MMG3009NT1	413Kb/14P	Heterojunction Bipolar Transistor (InGaP HBT) Rev. 7, 9/2014
	MMG3008NT1	403Kb/14P	Heterojunction Bipolar Transistor (InGaP HBT) Rev. 7, 9/2014
	BTA312B-600CT	544Kb/6P	Bipolar Power Product Selection Guide March 2011
	MMG3011NT1	416Kb/14P	Heterojunction Bipolar Transistor (InGaP HBT) Rev. 7, 9/2014
	MMG3010NT1	364Kb/15P	Heterojunction Bipolar Transistor (InGaP HBT) Rev. 5, 3/2008
	82S137	312Kb/3P	4K-bit TTL bipolar PROM November 11, 1986
	MMZ09312B	1Mb/28P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 12/2014
	MMG3H21NT1	367Kb/14P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 3, 9/2014
	MMG3001NT1	388Kb/14P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 9, 10/2014
	MMA25312B	342Kb/10P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 9/2014
	MMA20312B	678Kb/15P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 9/2014
	MMG3013NT1	403Kb/15P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 7, 2/2012
	MMA20312BV	901Kb/18P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 9/2014
	MMG3003NT1	640Kb/17P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 9, 9/2014
	MMG3006NT1	478Kb/24P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 6, 12/2017
	MMG3005NT1	456Kb/20P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 9, 10/2014
	MMG3012NT1	423Kb/14P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 8, 9/2014
	MMG3015NT1	389Kb/14P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 4, 9/2014
	MMZ25332B	640Kb/19P	Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 5/2014

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What is BIPOLAR

Bipolar is one of the electronic components, and means an element that has an electromagnetic polarity.

In general, it often refers to a device called a Bipolar Junction Transistor (BJT).

A BJT is a semiconductor device made up of three different regions.

These regions are called base, collector, and emitter, and pn junctions are formed between the base and the collector and between the collector and the emitter.

This pn junction controls the flow of current and allows the BJT to be used as a current amplifier or switch, etc.

Besides BJT, other bipolar devices include Darlington Transistor, Sziklai Pair, and Bipolar Darlington.

These devices are used for current amplification, switching, and power stabilization.

Bipolar devices are widely used in the fields of electronic devices, communication, and control, and are one of the essential components in analog circuits.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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