D-S Datasheet(PDF) - SIA537EDJ - Vishay Telefunken

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D-S Datasheet, PDF

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Searched Keyword : 'D-S' - Total: 328 (1/17) Pages

Manufacturer	Part #	Datasheet	Description
Vishay Telefunken	SIA537EDJ	398Kb/14P	N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
	SIR826ADP	381Kb/13P	N-Channel 80 V (D-S) MOSFET
	SI7454DDP	345Kb/13P	N-Channel 100 V (D-S) MOSFET
	SIR472DP	306Kb/7P	N-Channel 30-V (D-S) MOSFET
	SIS456DN	556Kb/13P	N-Channel 30 V (D-S) MOSFET
	SISA10DN	592Kb/13P	N-Channel 30 V (D-S) MOSFET
	SI1424ED	267Kb/12P	N-Channel 20 V (D-S) MOSFET
	SI2342DS	247Kb/8P	N-Channel 8 V (D-S) MOSFET
	SI3460DD	724Kb/11P	N-Channel 20 V (D-S) MOSFET
	SIA430DJ	207Kb/9P	N-Channel 20 V (D-S) MOSFET
	SI1070X	150Kb/8P	N-Channel 30 V (D-S) MOSFET
	SI4126DY	273Kb/10P	N-Channel 30-V (D-S) MOSFET
	SI4156DY	258Kb/10P	N-Channel 30-V (D-S) MOSFET
	SI7634BD	310Kb/13P	N-Channel 30-V (D-S) MOSFET
	SI8902AEDB	259Kb/11P	N-Channel 24 V (D-S) MOSFET
	SIE882DF	207Kb/10P	N-Channel 25-V (D-S) MOSFET
	SIR330DP	339Kb/13P	N-Channel 30 V (D-S) MOSFET
	SIR438DP	343Kb/13P	N-Channel 25-V (D-S) MOSFET
	SIR460DP	311Kb/13P	N-Channel 30-V (D-S) MOSFET
	SIR820DP	313Kb/13P	N-Channel 30 V (D-S) MOSFET

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What is D-S

D-S is one of the terms commonly used in electronic components.

D-S stands for Drain-Source and is used in semiconductor devices such as MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).

A MOSFET is one of the representative semiconductor devices and is used to control current according to voltage.

A MOSFET has three pins: Gate, Drain, and Source, among which D-S represents the distance between Drain and Source.

The D-S distance is one of the factors that have an important influence on MOSFET characteristics.

Making this distance smaller increases the voltage strength across the device, which increases the speed and performance of the MOSFET.

Therefore, the D-S distance is one of the important factors determining the performance of MOSFETs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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