DIFFUSED Datasheet(PDF) - TLCR6200 - Vishay Siliconix

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DIFFUSED Datasheet, PDF

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Searched Keyword : 'DIFFUSED' - Total: 180 (1/9) Pages

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	TLCR6200	128Kb/6P	Untinted non-diffused lens Rev. 1.2, 03-Mar-15
	TLCS510	240Kb/14P	Untinted non-diffused lens Rev. 1.8, 03-Feb-16
	TLPR5600	148Kb/10P	Sideview LED, 5 mm Tinted Diffused Rev. 1.9, 13-Sep-07
	TLPG5600	301Kb/9P	Sideview LED, 5 mm Tinted Diffused Rev. 1.7, 31-Aug-04
	TLPG5600	271Kb/10P	Sideview LED, 5 mm Tinted Diffused Rev. 1.7, 31-Aug-04
	TLCR5800	174Kb/7P	Ultrabright LED, 5 mm Untinted Non-Diffused Rev. 1.5, 30-Aug-04
	TLDR440	172Kb/6P	High Intensity LED, ∅ 3 mm Tinted Diffused Rev. 1.4, 30-Aug-04
	TLCY5100	144Kb/7P	Ultrabright LED, 5 mm Untinted Non-Diffused Rev. 1.4, 16-Feb-05
	TLCR5800	174Kb/7P	Ultrabright LED, ∅ 5 mm Untinted Non-Diffused Rev. 2, 03-Apr-03
	TLDR5400	187Kb/6P	High Intensity LED, 5 mm Tinted Diffused Rev. 1.4, 30-Aug-04
	TLDR4400	74Kb/5P	High Intensity LED, 3 mm Tinted Diffused Rev. A1, 04-Feb-99
	TLHK5400	73Kb/5P	High Intensity LED, 5 mm Tinted Diffused Package Rev. A1, 04-Feb-99
	TLHR46	101Kb/8P	High Efficiency LED, 3 mm Tinted Total Diffused Rev. A1, 04-Feb-99
	TLHK5100	265Kb/9P	High Intensity LED, ∅ 5 mm Untinted Non-Diffused Rev. 1.9, 31-Aug-04
	TLHE5800	75Kb/5P	High Intensity LED, 5 mm Untinted Non-Diffused Rev. A1, 04-Feb-99
	TLUR440	117Kb/5P	Universal LED in 3 mm Tinted Diffused Package Rev. 1.7, 14-Jun-06
	TLHK51	112Kb/9P	High Intensity LED, 5 mm Untinted Non-Diffused Rev. A3, 04-Feb-99
	TLCW5100	163Kb/6P	Ultrabright White LED, 5 mm Untinted Non-Diffused Rev. 1.4, 30-Aug-04
	TLHF5800	114Kb/5P	High Intensity LED, ??5 mm Untinted Non-Diffused 18-Jul-08
	TLHE5400	73Kb/5P	High Intensity LED, 5 mm Tinted Diffused Package Rev. A1, 04-Feb-99

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What is DIFFUSED

In electronic components, DIFFUSED is a term commonly used in the semiconductor manufacturing process.

In the semiconductor manufacturing process, DIFFUSED generally refers to a technology that dissolves impurities into a semiconductor material and causes an oxidation reaction to create a desired semiconductor device.

These technologies are one of the important processes in determining the characteristics of semiconductor devices.

For example, in semiconductor devices using silicon, diffusion (a technology that causes an oxidation reaction by melting impurities) is commonly used to form a pn junction (positive-negative junction) inside the device.

This pn junction is one of the basic components of diodes, transistors, and integrated circuits used in various electronic components, and is an important factor in determining the electrical characteristics of semiconductor devices.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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