Manufacturer | Part # | Datasheet | Description |
Samsung semiconductor
|
KMM5321200C2W |
277Kb/17P |
1Mx32 DRAM SIMM (1MX16 Base) |
KMM5321204C2W |
286Kb/17P |
1Mx32 DRAM SIMM (1MX16 Base) |
Renesas Technology Corp
|
UPD48576118F1 |
1Mb/52P |
576M-BIT Low Latency DRAM |
CML Microcircuits
|
MX812 |
176Kb/14P |
VSR CODEC WITH DRAM CONTROL |
Infineon Technologies A...
|
HYB18T256324F-16 |
1Mb/80P |
256-Mbit GDDR3 DRAM [600MHz] Rev. 1.11, April 2005 |
List of Unclassifed Man...
|
MX812 |
115Kb/13P |
VSR CODEC WITH DRAM CONTROL |
Alliance Semiconductor ...
|
AS4C1M16E5 |
603Kb/22P |
5V 1M횞16 CMOS DRAM (EDO) |
SPANSION
|
S72NS-P |
461Kb/14P |
MirrorBit Flash Memory and DRAM |
List of Unclassifed Man...
|
MT4C4256E |
404Kb/2P |
1 MEG PAGE MODE DRAM |
Eorex Corporation
|
EM48AM3284LBB |
272Kb/22P |
512Mb (4M횞4Bank횞32) Mobile Synchronous DRAM |
White Electronic Design...
|
WED416S8030A |
164Kb/12P |
2Mx16x 4 Banks Synchronous DRAM |
Hynix Semiconductor
|
HY51VS17403HG |
96Kb/11P |
4M x 4Bit EDO DRAM |
Renesas Technology Corp
|
UPD48288209AF1 |
1Mb/54P |
288M-BIT Low Latency DRAM |
UPD48288118AF1 |
1Mb/52P |
288M-BIT Low Latency DRAM |
Alliance Semiconductor ...
|
AS4C256K16E0 |
644Kb/24P |
5V 256Kx16 CMOS DRAM (EDO) |
Elpida Memory
|
EDR2518ABSE |
1Mb/79P |
288M bits Direct Rambus DRAM |
Micron Technology
|
MT4C40005 |
140Kb/1P |
4 MEG x 4 DRAM |
Elpida Memory
|
PD488588 |
1Mb/79P |
288M bits Direct Rambus DRAM |
Austin Semiconductor
|
AS4LC1M16 |
195Kb/22P |
1 MEG x 16 DRAM |
Hynix Semiconductor
|
HY51VS18163HG |
107Kb/12P |
1M x 16Bit EDO DRAM |