Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp
|
NP110N055PUK |
122Kb/8P |
MOS FIELD EFFECT TRANSISTOR |
Winson Semiconductor Co...
|
WSH130 |
149Kb/5P |
Hall Effect Switch IC |
ON Semiconductor
|
MTD5N25E |
266Kb/10P |
Power Field Effect Transistor August, 2006 ??Rev. 2 |
MTV10N100E |
285Kb/11P |
Power Field Effect Transistor August, 2006 ??Rev. 1 |
MTV16N50E |
270Kb/10P |
Power Field Effect Transistor August, 2006 ??Rev. 1 |
Zhaoxingwei Electronics...
|
AH49FNTR-G1 |
1,018Kb/9P |
Linear Hall-Effect IC |
Renesas Technology Corp
|
NP20N10YDF |
125Kb/8P |
MOS FIELD EFFECT TRANSISTOR |
PIC GmbH
|
HS-324-03-0300 |
147Kb/3P |
Flatpack Hall Effect Sensor |
HS-324R-05-0300 |
171Kb/3P |
Flatpack Hall Effect Sensor |
Asahi Kasei Microsystem...
|
EM1781 |
292Kb/3P |
Monolithic Hall Effect ICs |
Feeling Technology Corp...
|
FS177N |
161Kb/7P |
Single Hall Effect Senser |
Micronas
|
HAL5XY |
1Mb/48P |
Hall-Effect Sensor Family Edition April 15, 2010 |
Renesas Technology Corp
|
2SJ202 |
505Kb/7P |
MOS FIELD EFFECT TRANSISTOR 2006 |
2SJ203 |
405Kb/7P |
MOS FIELD EFFECT TRANSISTOR 1990 |
2SJ204 |
347Kb/7P |
MOS FIELD EFFECT TRANSISTOR 1991 |
2SJ208 |
483Kb/6P |
MOS FIELD EFFECT TRANSISTOR 2006 |
2SJ355 |
268Kb/8P |
MOS FIELD EFFECT TRANSISTOR 1996 |
2SJ411 |
216Kb/8P |
MOS FIELD EFFECT TRANSISTOR 1996 |
2SJ462 |
266Kb/8P |
MOS FIELD EFFECT TRANSISTOR 1996 |
2SJ463A |
324Kb/7P |
MOS FIELD EFFECT TRANSISTOR 1996 |