FLASH Datasheet(PDF) - S25FS256T - Infineon Technologies AG

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Searched Keyword : 'Flash' - Total: 11 (1/1) Pages

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	S25FS256T	969Kb/91P	256Mb SEMPER™ Nano Flash Rev. L 2022-12-21
	S25FL064L	2Mb/146P	IC FLASH 64MBIT SPI/QUAD 8USON 20190529
	S26HS02GT	214Kb/13P	2Gb/4Gb SEMPER??Flash HYPERBUS??interface, 1.8V/3.0V 002-34696 Rev. **
	S28HS02GT	164Kb/12P	2Gb/4Gb SEMPER??Flash Octal interface, 1.8V/3.0V 002-34695 Rev. **
	S26HS256T	1Mb/166P	256Mb/512Mb/1Gb SEMPER??Flash HYPERBUS??interface, 1.8V/3.0V 002-12337 Rev. *Y
	S28HS256T	1Mb/138P	S256Mb/512Mb/1Gb SEMPER??Flash Octal interface, 1.8V/3.0V 002-18216 Rev. *W
	S76HS512TC0	218Kb/16P	512Mb SEMPER™ Flash and 64Mb HYPERRAM™ 2.0 HYPERBUS™ interface, multi-chip package, 1.8 V/3.0 V Rev. B 2022-09-21
	TLE7810G	905Kb/53P	Integrated double low-side switch, high-side/LED driver, hall supply, wake-up inputs and LIN communication with embedded MCU (16kB Flash) Rev. 3.01, April 2008
	TLE7824G	906Kb/53P	Integrated double low-side switch, high-side/LED driver, hall supply, wake-up inputs and LIN communication with embedded MCU (24kB Flash) Rev. 3.01, April 2008
	TLE7826G	906Kb/53P	Integrated double low-side switch, high-side/LED driver, hall supply, wake-up inputs and LIN communication with embedded MCU (32kB Flash) Rev. 3.01, April 2008
	TLE7809G	891Kb/52P	Integrated double low-side switch, high-side/LED driver, hall supply, wake-up inputs and LIN communication with embedded MCU (16kB Flash) Rev. 3.01, April 2008

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What is Flash

Flash is one of the non-volatile memory (NVMe) technologies used to store data in electronic devices.

Flash memory was developed as an alternative to Electrically Erasable Programmable Read-Only Memory (EEPROM).

Flash memory is used in most electronic devices to store data.

It is very good in terms of memory performance, speed and accessibility. Flash memory can store data faster and retain data even when the power is turned off.

For this reason, flash memory is used in various devices such as digital cameras, smartphones, tablets, USB drives, and solid-state drives (SSDs).

Flash memory has high speed, low cost and large storage capacity compared to EEPROM.

However, Flash memory has a limitation in that it takes time to erase and rewrite an entire block at once.

This limitation can cause problems for applications that require frequent data changes.

However, with the recent development of Flash technology, various technologies are being developed to overcome these limitations.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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