Manufacturer | Part # | Datasheet | Description |
Mitsubishi Electric Sem...
|
CT90AM-18 |
32Kb/2P |
INSULATED GATE BIPOLAR TRANSISTOR |
M57161L-01 |
124Kb/6P |
HYBRID IC FOR DRIVING TRENCH-GATE IGBT |
GCU08BA-130 |
68Kb/6P |
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT |
GCU15CA-130 |
79Kb/7P |
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT |
CM400DY-66H |
49Kb/4P |
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
CM400HB-90H |
63Kb/4P |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
CM800E2C-66H |
55Kb/4P |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
CM400HG-66H |
62Kb/7P |
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
MGFC1403 |
232Kb/6P |
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE |
M57115L-01 |
45Kb/3P |
THE POWER SUPPLY DC-DC CONVERTER FOR IGBT MODULE GATE DRIVE |
MGF1305 |
487Kb/4P |
FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE |
MGF1304A |
488Kb/4P |
FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE |
FT1500AU-240 |
41Kb/4P |
HIGH VOLTAGE, HIGH POWER, GENERAL USE DYNAMIC GATE, PRESS PACK TYPE |
MGFC1801 |
220Kb/6P |
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE? |
GCU08BA-130 |
127Kb/6P |
GCT (Gate Commutated Turn-off) THYRISTOR UNIT HIGH POWER INVERTER USE PRESS PACK TYPE |
GCU15CA-130 |
134Kb/7P |
GCT (Gate Commutated Turn-off) THYRISTOR UNIT HIGH POWER INVERTER USE PRESS PACK TYPE |
GCU04AA-130 |
121Kb/6P |
GCT (Gate Commutated Turn-off) THYRISTOR UNIT HIGH POWER INVERTER USE PRESS PACK TYPE |
M50752-PGYS |
257Kb/5P |
The M50752-PGYS is an EPROM mounted-type microcomputer employing a silicon gate CMOS process and was designed for developing programs for single-chip |
M50753-PGYS |
288Kb/6P |
The M50753-PGYS is an EPROM mounted-type microcomputer employing a silicon gate CMOS process and was designed for developing programs for single-chip |