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HIGH Datasheet, PDF

Agilent(Hewlett-Packard)(100)Fairchild Semiconductor(596)FCI connector(2)Feeling Technology Corp.(7)Ferroxcube International Holding B.V.(5)Filtran LTD(7)Filtronic Compound Semiconductors(49)Finisar Corporation.(6)First Components International(98)Force Technologies Ltd(3)Formosa MS(35)FOSLINK SEMICONDUCTOR CO.,LTD(8)Fox Electronics(3)Freescale Semiconductor, Inc(127)Frontier Electronics.(63)FSP TECHNOLOGY INC.(62)Fuji Electric(192)Fujitsu Component Limited.(58)Future Technology Devices International Ltd.(12)FutureWafer Tech Co.,Ltd(8)Galaxy Power, Inc.(1)Gamewell-FCI by Honeywell(1)Gamma Microelectronics Inc.(22)Gaomi Xinghe Electronics Co., Ltd.(7)GE Solid State(3)General Semiconductor(4)GeneSiC Semiconductor, Inc.(169)GENESYS LOGIC(2)Gennum Corporation(3)GETAI ELECTRONICS DEVICE CO., LTD(463)GHz Technology(8)Gilway Technical Lamp(4)Glenair, Inc.(29)Global Mixed-mode Technology Inc(59)Golledge Electronics Ltd(108)GOOD-ARK Electronics(96)Goodwork Semiconductor Co., Ltd .(25)Grayhill, Inc(10)GREATECS(4)Green Power Solutions srl(4)GTM CORPORATION(26)Guangzhou Juxing Electronic Co., Ltd.(2)Guilin Strong Micro-Electronics Co., Ltd.(7)Gulf Semiconductor(4)Gunter Seniconductor GmbH.(10)Hamamatsu Corporation(106)HAMLIN Position and Movement Sensor Solutions(1)HANAMICRON(1)Hantronix,Inc(1)Harris Corporation(19)Harwin Plc(18)HB Electronic Components(46)HBH Microwave GmbH(7)Hexawave, Inc(3)Hi-Sincerity Mocroelectronics(14)High Voltage Power Solutions, Inc.(25)Hirose Electric(37)Hitachi Metals, Ltd(4)Hitachi Semiconductor(355)Hittite Microwave Corporation(117)HOKURIKU ELECTRIC INDUSTRY CO.,LTD(5)Holt Integrated Circuits(16)Holtek Semiconductor Inc(34)HolyStone International(11)Honeywell Accelerometers(4)Honeywell Solid State Electronics Center(15)Hongfa Technology(186)Hotchip Technology Co.,Ltd(1)HuaXinAn Electronics CO.,LTD(34)HY ELECTRONIC CORP.(81)HYES Optoelectronics, Inc.(2)Hynix Semiconductor(3)IC-Haus GmbH(1)ice Components, Ins.(14)IDEA.lnc.(10)IK Semicon Co., Ltd(19)Illinois Capacitor, Inc.(622)ILSI America LLC(1)Inchange Semiconductor Company Limited(164)Infineon Technologies AG(826)Injoinic Technology Co.,Ltd.(4)InnovASIC, Inc(1)Inolux Corporation(10)Integral Corp.(5)Integrated Circuit Solution Inc(5)Integrated Circuit Systems(8)Integrated Device Technology(129)Integrated Silicon Solution, Inc(36)Intel Corporation(14)InterFET Corporation(3)International Rectifier(738)Interpoint Corporation Company(2)Intersil Corporation(614)Intronics Power, Inc.(16)IP SEMICONDUCTOR CO., LTD.(82)IQD Frequency Products Ltd(1)IRC - a TT electronics Company.(32)Ironwood Electronics.(65)Isahaya Electronics Corporation(119)ISOCOM COMPONENTS(59)ITT Industries(81)IXYS Corporation(599)Japan Aviation Electronics Industry, Ltd.(9)Jauch Quartz Gmbh(9)jb Capacitors Company(14)JDS Uniphase Corporation(3)Jianghai Europe GmbH(15)Jiangsu Changjiang Electronics Technology Co., Ltd(7)JIEJIE MICROELECTRONICS CO.,Ltd(2)JILIN SINO-MICROELECTRONICS CO., LTD.(116)Jinan Gude Electronic Device(11)Jinan Jing Heng Electronics Co., Ltd.(16)JMK Inc.(14)Johanson Technology Inc.(69)Ningbo Foryard Optoelectronics Co., Ltd.(102)Quanzhou Jinmei Electronic Co.,Ltd.(2)SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD(2)Shenzhen hui lida electronic co., LTD(2)Shenzhen Jin Yu Semiconductor Co., Ltd.(1)
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Search Description : 'HIGH' - Total: 826 (1/42) Pages
ManufacturerPart NumberDatasheetDescription

Infineon Technologies A...
BGS14PN10 SP4T high linearity, high power RF Switch
BGS12PN10 SPDT high linearity, high power RF Switch
BGS13PN10 SP3T high linearity, high power RF Switch
BFQ790 High Linearity High Gain 1/2 Watt RF Driver Amplifier
SIGC15T60UN High Speed IGBT Chip in NPT-technology positive temperature coefficient
TLE6250_17 High Speed CAN-Transceiver
PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390450 MHz
FS3L30R07W2H3F-B11 High Speed IGBT H3
IPW60R075CP Cool MOS™ Power Transistor Feature New revolutionary high voltage technology
DD98N Pressure contact technology for high reliability
TLE4998C8 High Performance Programmable Single/Dual Linear Hall Sensor
SIGC07T60UN High Speed IGBT Chip in NPT-technology positive temperature coefficient
IPB60R120C7 CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
PTFA142401EL Thermally-Enhanced High Power RF LDMOS FET 240 W, 14501500 MHz
BSC0511NDI Optimized for high performance buck converters
IPD60R800CE Very high commutation ruggedness
IKB30N65EH5 TRENCHSTOPTM 5 high speed switching IGBT copacked with full rated current RAPID 1 anti parallel diode
FOA41001B1 Semiconductor Solutions for High Speed Communi cation and Fiber OpticApplications
IRFI4410ZPBF High Efficiency Synchronous Rectification in SMPS
PTFA220041M High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz

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