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HIGH Datasheet, PDF

Changzhou Shunye Electronics Co.,Ltd.(13)HUARUN POWTECH(1)Lowpower Semiconductor inc(21)Ningbo songle relay co.,ltd(2)Nuvotem Talema(5)NXP Semiconductors(223)P-tec Corporation(70)PACELEADER INDUSTRIAL(10)Pan Jit International Inc.(84)Panasonic Battery Group(18)Panasonic Semiconductor(335)PANDUIT CORP.(2)PARA LIGHT ELECTRONICS CO., LTD.(10)Pasternack Enterprises, Inc.(211)PCA ELECTRONICS INC.(40)Pentair plc. All rights reserved.(4)Peregrine Semiconductor(6)Peregrine Semiconductor Corp.(16)Pericom Semiconductor Corporation(64)PerkinElmer Optoelectronics(11)PETERMANN-TECHNIK(118)PhaseLink Corporation(6)Phihong USA Inc.(6)PHOENIX CONTACT(40)PIC GmbH(11)Pixart Imaging Inc.(4)Pletronics, Inc.(1)PLX Technology(2)PMC-Sierra, Inc(11)Pomona Electronics(14)Potato Semiconductor Corporation(8)Power Analog Micoelectronics(11)Power IC Ltd.(5)Power Integrations, Inc.(7)Power Semiconductors(8)Power System Technology(1)Power-One(6)Powerbox(1)PowerDynamics, Inc(4)Powerex Power Semiconductors(58)Powersem GmbH(2)Powertip Technology(1)Precid-Dip Durtal SA(1)PREMIER DEVICES, INC.(17)Premier Magnetics, Inc.(4)PREMO CORPORATION S.L(21)Princeton Technology Corp(9)Protech Systems Co., Ltd.(21)Protek Devices(51)Pulse A Technitrol Company(43)PulseCore Semiconductor(3)Purdy Electronics Corporation(9)Pyramid Semiconductor Corporation(34)Qimonda AG(1)QT Optoelectronics(7)Qualtek Electronics Corporation(2)QUARTZCOM the communications company(40)Radiometrix Ltd(12)Ralston Instruments.(17)Raltron Electronics Corporation(22)Ramtron International Corporation(2)Raytheon Company(1)RCD COMPONENTS INC.(12)Realtek Semiconductor Corp.(16)Recom International Power(10)Rectron Semiconductor(50)Red Lion Controls. Inc(1)Reed Relays and Electronics(2)Renesas Technology Corp(1464)RF Micro Devices(73)RF Monolithics, Inc(12)RFE international(29)RFHIC(39)rfsolutions.ltd(3)Rhombus Industries Inc.(50)RHOPOINT COMPONENTS(12)Richtek Technology Corporation(89)RICOH electronics devices division(8)Riedon Powertron(29)Rochester Electronics(12)Rockchip Electronics Co., Ltd(1)Rohm(476)Roithner LaserTechnik GmbH(427)Rosenberger Hochfrequenztechnik GmbH & Co. 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Search Description : 'HIGH' - Total: 45 (1/3) Pages
ManufacturerPart NumberDatasheetDescription

Stanson Technology
STN6303 STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4488L STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
STS20T10 Reliable High Temperature Operation
STN9926 The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
ST3400SRG The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP9235 STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
STP4407 The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP4925 STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4526 STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4346 STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3401SRG ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
ST7400 ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2315SRG ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN9926AA The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
STN4850 STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4546 STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4440 STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2319SRG ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
ST1638 Step-Up DC/DC Converter High Efficiency PFM
STN4822 STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

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