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HIGH Datasheet, PDF

Changzhou Shunye Electronics Co.,Ltd.(13)HUARUN POWTECH(1)Lowpower Semiconductor inc(21)Ningbo songle relay co.,ltd(2)Nuvotem Talema(5)NXP Semiconductors(223)P-tec Corporation(70)PACELEADER INDUSTRIAL(10)Pan Jit International Inc.(84)Panasonic Battery Group(18)Panasonic Semiconductor(335)PANDUIT CORP.(2)PARA LIGHT ELECTRONICS CO., LTD.(10)Pasternack Enterprises, Inc.(211)PCA ELECTRONICS INC.(40)Pentair plc. All rights reserved.(4)Peregrine Semiconductor(6)Peregrine Semiconductor Corp.(16)Pericom Semiconductor Corporation(64)PerkinElmer Optoelectronics(11)PETERMANN-TECHNIK(118)PhaseLink Corporation(6)Phihong USA Inc.(6)PHOENIX CONTACT(40)PIC GmbH(11)Pixart Imaging Inc.(4)Pletronics, Inc.(1)PLX Technology(2)PMC-Sierra, Inc(11)Pomona Electronics(14)Potato Semiconductor Corporation(8)Power Analog Micoelectronics(11)Power IC Ltd.(5)Power Integrations, Inc.(7)Power Semiconductors(8)Power System Technology(1)Power-One(6)Powerbox(1)PowerDynamics, Inc(4)Powerex Power Semiconductors(58)Powersem GmbH(2)Powertip Technology(1)Precid-Dip Durtal SA(1)PREMIER DEVICES, INC.(17)Premier Magnetics, Inc.(4)PREMO CORPORATION S.L(21)Princeton Technology Corp(9)Protech Systems Co., Ltd.(21)Protek Devices(51)Pulse A Technitrol Company(43)PulseCore Semiconductor(3)Purdy Electronics Corporation(9)Pyramid Semiconductor Corporation(34)Qimonda AG(1)QT Optoelectronics(7)Qualtek Electronics Corporation(2)QUARTZCOM the communications company(40)Radiometrix Ltd(12)Ralston Instruments.(17)Raltron Electronics Corporation(22)Ramtron International Corporation(2)Raytheon Company(1)RCD COMPONENTS INC.(12)Realtek Semiconductor Corp.(16)Recom International Power(10)Rectron Semiconductor(50)Red Lion Controls. Inc(1)Reed Relays and Electronics(2)Renesas Technology Corp(1464)RF Micro Devices(73)RF Monolithics, Inc(12)RFE international(29)RFHIC(39)rfsolutions.ltd(3)Rhombus Industries Inc.(50)RHOPOINT COMPONENTS(12)Richtek Technology Corporation(89)RICOH electronics devices division(8)Riedon Powertron(29)Rochester Electronics(12)Rockchip Electronics Co., Ltd(1)Rohm(476)Roithner LaserTechnik GmbH(427)Rosenberger Hochfrequenztechnik GmbH & Co. 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Search Description : 'HIGH' - Total: 45 (1/3) Pages
ManufacturerPart NumberDatasheetDescription

Stanson Technology
STN9926 The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
STN4546 STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4426 STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3400SRG The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
ST2318SRG ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
STP9527 STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3422A The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
ST1638 Step-Up DC/DC Converter High Efficiency PFM
STN4488L STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
STC6332 The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
ST2341A ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4803 STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4416 STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4480 STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STN4526 STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2304SRG ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4435A STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4403 STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
STP6308 STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4925 STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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