LONG Datasheet(PDF) - X-NUCLEO-53L1A1

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	X-NUCLEO-53L1A1	579Kb/5P	Long distance ranging Time-of-Flight sensor expansion board based on VL53L1X for STM32 Nucleo February 2018
	VL53L1X	1Mb/35P	A new generation, long distance ranging Time-of-Flight sensor based on ST’s FlightSense technology June 2022
	VL53L1X	1Mb/35P	A new generation, long distance ranging Time-of-Flight sensor based on ST?셲 FlightSense??technology November 2018 Rev 3
	SCTWA90N65G2V	249Kb/12P	Silicon carbide Power MOSFET 650 V, 119 A, 18 m廓 in an HiP247 long leads package Rev 2 - August 2020
	STWA40N95K5	740Kb/13P	N-channel 950 V, 0.110 ??typ., 38 A MDmesh??K5 Power MOSFET in a TO-247 long leads package August 2015 Rev 1
	TSU111H	27Mb/31P	High temperature (150 °C) and long mission profile automotive grade, high accuracy (250 μV) 5 V CMOS operational amplifier Rev 1 - December 2022
	STWA70N60DM2	414Kb/12P	N-channel 600 V, 0.037 typ., 66 A MDmeshTM DM2 Power MOSFET in a TO-247 long leads package July 2015 Rev 2
	SCTWA40N120G2AG	257Kb/12P	Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package Rev 4 - November 2021
	SCTWA60N120G2AG	242Kb/12P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package Rev 1 - December 2020
	STGYA50M120DF3	2Mb/15P	Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package October 2021 Rev 2
	STGYA50H120DF2	2Mb/15P	Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package January 2022 Rev 1
	STWA63N65DM2	329Kb/12P	N-channel 650 V, 0.042 typ., 60 A MDmeshTM DM2 Power MOSFET in a TO-247 long leads package April 2018 Rev 1
	STGYA75H120DF2	2Mb/15P	Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package October 2021 Rev 2
	STWA67N60DM6	274Kb/12P	N-channel 600 V, 45 m typ., 58 A MDmesh DM6 Power MOSFET in a TO‑247 long leads package June 2021 Rev 4
	STGWA30H65DFB2	513Kb/15P	Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package DS13189 - Rev 2 - February 2020
	STGWA50IH65DF	313Kb/14P	Trench gate field-stop 650 V, 50 A, soft switching IH series IGBT in a TO-247 long leads package DS11796 - Rev 3 - April 2020
	STGWA75H65DFB2	560Kb/15P	Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package DS13215 - Rev 2 - February 2020
	STWA50N65DM2AG	726Kb/12P	Automotive-grade N-channel 650 V, 0.070 typ., 38 A Power MOSFET MDmeshTM DM2 in TO-247 long leads package December 2017 Rev 2
	STWA75N65DM6	253Kb/12P	N-channel 650 V, 33 m typ., 75 A MDmesh DM6 Power MOSFET in a TO-247 long leads package September 2021 Rev 1
	STWA68N60M6	503Kb/13P	N-channel 600 V, 35 m typ., 63 A MDmeshTM M6 Power MOSFET in a TO-247 long leads package November 2018 Rev 2

LONG Datasheet, PDF

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