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MHZ Datasheet, PDF

Search Description : 'MHZ' - Total: 139 (1/7) Pages
ManufacturerPart NumberDatasheetDescription

Cree, Inc
CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier
CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier
PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz
CGHV35060MP_16 60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations
PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 21102170 MHz
CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
PTVA030121EA Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390450 MHz
GTVA263202FC Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 26202690 MHz
PXFC191507FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 18051990 MHz
PTFB211503FL Thermally-Enhanced High Power RF LDMOS FET 150 W, 21102170 MHz
CGHV14800 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
CMPA2560025F CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
CGHV37400F 400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
CGH21240F 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
CMPA0060025D 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier
PTRA087008NB Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755805 MHz
PTVA127002EV Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 12001400 MHz
PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920960 MHz
CGHV40180F 180 W, DC - 2000 MHz, 50 V, GaN HEMT
PTFB201402FC High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz

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