NOISE Datasheet(PDF) - BFR183W - Siemens Semiconductor Group

Manufacturer	Part #	Datasheet	Description
Siemens Semiconductor G...	BFR183W	56Kb/7P	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)
	BFS481	53Kb/6P	NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
	BFR181	57Kb/7P	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
	BF2040	16Kb/2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BFR183	56Kb/7P	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)
	BF2030W	16Kb/2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BFQ73S	677Kb/13P	NPN SILICON RF TRANSISTOR (FOR LOW-NOISE, LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz)
	BFP183	60Kb/7P	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
	BFP81	59Kb/7P	NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.)
	BFP183R	58Kb/7P	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)
	BFP183W	59Kb/7P	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
	BFY196	120Kb/5P	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.)
	BFY193	122Kb/5P	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.)
	BF1009S	51Kb/4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
	BF1005S	52Kb/4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BF1012S	43Kb/4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BFQ70	339Kb/14P	NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA)
	BF1012	33Kb/4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
	BF1005	51Kb/4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BFQ29P	228Kb/10P	NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)

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