Manufacturer | Part # | Datasheet | Description |
Siemens Semiconductor G...
|
BUZ104S |
128Kb/8P |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175째C operating temperature) |
BUZ103S |
121Kb/8P |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175째C operating temperature) |
BUZ104SL |
126Kb/8P |
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175째C operating temperature) |
BF2030W |
16Kb/2P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
BF2030 |
16Kb/2P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
BF2040W |
31Kb/2P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
3LD2003-1TP53 |
307Kb/6P |
SENTRON, Switch disconnector 3LD, emergency switching-off switch, 3- pole, Iu: 16 A, operating power / at AC-23 A 400 V: 7.5 kW, front-mounted, 1 NC, 1 NO, rotary operating mechanism, Red / yellow, 4-hole mounting of the handle 12/13/2022 |
CGY98 |
44Kb/5P |
GaAs MMIC (Broadband Power Amplifier [ 800..2000 Mhz ] GSM,AMPS or PCN Operating voltage range: 2.7 to 5.0 V) |
BF2040 |
16Kb/2P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
CGY94 |
122Kb/9P |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V) |
CGY180 |
278Kb/15P |
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V) |
BF1009S |
51Kb/4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
BF1012 |
33Kb/4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
BF1005 |
51Kb/4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
BF1005S |
52Kb/4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
BF1012S |
43Kb/4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
3SE6604-2BA |
267Kb/3P |
magnetically-operated switch, contact block, large, 25 x 88 mm, 2 NC connection cable 3 m LIYY 4 x 0.25 mm2 required solenoid 3SE6704-2BA or with increased operating distance 3SE6701-2BA 10/20/2023 |