Manufacturer | Part # | Datasheet | Description |
Hamamatsu Corporation
|
S4404-01 |
190Kb/2P |
High sensitivity phototransistor |
S9251 |
492Kb/4P |
High sensitivity in near infrared range |
T11262 |
200Kb/4P |
High sensitivity for gas density measurement |
S9840 |
84Kb/4P |
High UV sensitivity CCD image sensor |
T11722-01 |
167Kb/4P |
For CO2 concentration measurement High sensitivity |
S12028_KPIN1083E01 |
575Kb/3P |
Enhanced near IR sensitivity, using a MEMS |
S7878 |
101Kb/2P |
Si photodiode High sensitivity X-ray detector |
S5668-11 |
60Kb/2P |
Si photodiode High sensitivity X-ray detectors |
C10013SK |
131Kb/6P |
Flat panel sensor High reliability, high sensitivity |
S9251 |
75Kb/2P |
Si APD High sensitivity in near IR range |
R9110 |
177Kb/4P |
PHOTOMULTIPLIER TUBE High Sensitivity and Lower Dark Current |
S7686 |
87Kb/2P |
Photodiode with sensitivity close to spectral luminous efficiency |
C8000-30 |
118Kb/2P |
High-sensitivity imaging from UV to nearinfrared wavelengths |
R7518 |
196Kb/4P |
PHOTOMULTIPLIER TUBES High Sensitivity with Low Noise Photocathode |
S8380 |
153Kb/4P |
NMOS linear image sensors with high IR sensitivity |
C12137 |
1Mb/9P |
High accuracy, high sensitivity, compact radiation detection module |
S11519 |
571Kb/4P |
Enhanced near IR sensitivity, using a MEMS technology |
S11510 |
465Kb/8P |
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm) |
S8265 |
119Kb/2P |
Si photodiode Visible sensitivity photodiode with high humidity resistance |
C5658_KACC1023E |
89Kb/2P |
Detects optical signals at 1 GHz, with high sensitivity |