Manufacturer | Part # | Datasheet | Description |
New Jersey Semi-Conduct...
|
BD201 |
76Kb/2P |
Epitaxial-Base, Silicon |
1N253 |
176Kb/2P |
STUD BASE RECTIFIERS |
2N2356 |
236Kb/1P |
COLLECTOR TO BASE VOLTAGE |
BDX18 |
85Kb/2P |
PNP SILICON TRANSISTORS, EPITAXIAL BASE |
2N2840 |
98Kb/1P |
PN (N-TYPE BASE) UNIJUCUION TRANSISTOR |
TIP35C |
88Kb/3P |
The TIP35C is a silicon Epitaxial-Base |
2N499 |
89Kb/1P |
GERMANIUM MICRO ALLOY DIFFUSED-BASE TRANSISTOR PNP POLARITY |
SD4590 |
122Kb/3P |
RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION |
2N4348 |
88Kb/2P |
Hometaxial-Base, High-Current Silicon N-P-N Transistors |
MRF10502 |
76Kb/2P |
Designed for 1025-1150 MHz pulse common base amplifier |
MJ10022 |
102Kb/2P |
NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode |
MJ10008 |
101Kb/2P |
NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE |
MJ10005 |
109Kb/2P |
NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode |
MJ10020 |
101Kb/2P |
NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode |
BD705 |
102Kb/2P |
silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package |
2N6486 |
236Kb/1P |
SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS |
2N5781 |
145Kb/2P |
Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors |