Manufacturer | Part # | Datasheet | Description |
Hamamatsu Corporation
|
C10633 |
217Kb/2P |
Good sensitivity in 900 nm to 1700 nm range 320 횞 256 pixels with EIA |
S4315-01 |
148Kb/4P |
Low bias operation, for 800 nm band |
S12023 |
271Kb/6P |
Low bias operation, for 800 nm band |
S10341 |
292Kb/4P |
Low bias operation, for 800 nm band |
R375 |
43Kb/2P |
160 nm to 850 nm Response (Multialkali) 51 mm (2 Inch) Diameter, 10-stage, Head-on Type |
R550 |
51Kb/2P |
300 nm to 850 nm Response (S-20) 51 mm (2 Inch) Diameter, 10-stage, Head-on Type |
S12053-02 |
232Kb/5P |
Short wavelength type APD, for 600 nm band |
S6045 |
235Kb/4P |
Low temperature coefficient type APD for 800 nm band |
S11510 |
465Kb/8P |
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm) |
S2381 |
152Kb/4P |
Si APD Low bias operation, for 800 nm band |
S6045 |
333Kb/5P |
鵝롦릇佯╊퓗?겹궭?ㅳ깤??800 nm躍?뵪APD |
S12742-254 |
165Kb/4P |
Photodiode with interference filter for monochromatic light (254 nm) detection |
S12426 |
611Kb/5P |
Low bias operation, high-speed Si APD for 900 nm |
C5964 |
198Kb/7P |
UV to near infrared range (200 to 1000 nm) For multichannel spectrophotometry |
S2684-254 |
55Kb/2P |
Si photodiode Photodiode with interference filter for monochromatic light (254 nm) detection |
S11500-1007 |
453Kb/7P |
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm), back-thinned FFT-CCD |
R12829 |
99Kb/4P |
800 nm High Sensitivity Multialkali Photocathode 28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type |
R636-10 |
27Kb/2P |
UV to Near IR (R636??0:185 to 930 nm, R758??0:160 to 930nm) Spectral Response 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type |